1 p-channel 100-v (d-s) mosfet fe at ures ? halo gen-free option available ?trenchfet ? p ow er mosfet ? uis and r g te s t e d applic ations ? activ e clamp in intermediate dc/dc power supplies p r oduct summary v ds (v) r ds(on) ( )i d (a ) q g (t yp.) - 100 0.120 at v gs = - 10 v - 19 16.5 nc 0.160 at v gs = - 4.5 v - 15.7 notes: a. surface mounted on 1" x 1" f r4 board. b. t = 10 s. absolute maximum ratings t a = 2 5 c, unless otherwise noted p a rameter symbol limit unit d r ain-source voltage v ds - 1 00 v gate-source v oltage v gs 20 c ontin uou s dr ain current (t j = 150 c ) t c = 25 c i d - 19. 0 a t c = 70 c - 12. 6 t a = 25 c - 15 a, b t a = 70 c - 10 a, b pulsed dr ain current i dm - 2 0 contin uous source-drain diode current t c = 25 c i s - 13. 2 t a = 25 c - 3.0 a, b a valanche current l = 0.1 mh i as 15 single-pulse a valanche energy e as 11.25 mj max i mum power dissipation t c = 25 c p d 52 w t c = 70 c 33 t a = 25 c 3. 7 a, b t a = 70 c 2. 4 oper ating junction and storage temperature range t j , t st g - 50 to 150 c solder ing recomme ndations (peak temperature) 260 s g d p-channel mosfet rohs compliant to-251 sdg top view www.din-tek.jp dtl 1 9 p 10
2 no t es: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady stat e conditins is 81 c/w. notes: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. t h ermal resistance ratings p aram eter s ymbol typical maximum un it maxim um junction-to-ambient a, b t d 10 s r thj a 26 33 c /w maximum junction-to-case (drain) steady state r thjc 1.9 2.4 s pecif ications t j = 25 c, unless otherwise noted p aram eter sym bol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = - 250 a - 10 0 v v ds t emper ature coefficient ' v ds /t j i d = - 250 a - 100 mv/c v gs( t h) t emperature co efficient ' v gs(th) /t j - 5. 0 gate-s ource threshold voltage v gs(t h) v ds = v gs , i d = - 2 50 a - 1 - 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 10 0 v , v gs = 0 v - 1 a v ds = - 10 0 v , v gs = 0 v , t j = 55 c - 10 on-state drain current a i d( o n) v ds t - 5 v, v gs = - 10 v - 10 a drain-source on-state resistance a r ds( on) v gs = - 10 v , i d = - 4 a 0.108 0.1 20 : v gs = - 4.5 v , i d = - 3 a 0.119 0.160 forward transconductance a g fs v ds = - 15 v , i d = 4 a 25 s dy nam ic b inpu t capacita nce c is s v ds = - 50 v , v gs = 0 v , f = 1 mhz 1480 pf output capacitance c oss 80 re v erse transfer capacitance c rs s 60 t o tal gate charge q g v ds = - 50 v , v gs = - 10 v , i d = - 4 a 35 5 5 nc v ds = - 50 v , v gs = - 4.5 v , i d = - 4 a 16.5 25 gate-s ource charge q gs 4.7 gate- dr ain charge q gd 8 g a te resistance r g f = 1 mh z 5 .3 8 : tu r n - o n d e l ay t i m e t d( on) v dd = - 5 0 v , r l = 1 2.5 : i d # - 4 a, v gen = - 4 .5 v , r g = 1 : 30 45 ns rise time t r 1 10 165 turn-off delaytime t d( off) 51 8 0 fall time t f 40 6 0 tu r n - o n d e l ay t i m e t d( on) v dd = - 5 0 v , r l = 1 2.5 : i d # - 4 a, v gen = - 10 v, r g = 1 : 11 1 8 rise time t r 13 2 0 turn-off delaytime t d( off) 42 6 5 fall time t f 10 1 5 drain - source body diode characteristics continuous source-drain diode current i s t c = 25 c - 19 a pulse diode forward current a i sm - 20 body diode v o ltage v sd i s = - 3 a - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 4 a, di/dt = 100 a/s, t j = 25 c 4 6 70 ns body diode reverse recovery charge q rr 9 7 150 nc reverse recovery fall time t a 36 ns re v erse recovery rise time t b 10 z z z g l q w h n m s ' 7 / 3
3 typica l c haracteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 4 8 12 16 20 012345 v gs = 10 thr u 4 v 3 v v ds - drain-to-so u rce v oltage ( v ) )a( tnerr u c niard -i d 0.0 8 0.10 0.12 0.14 0.16 0.1 8 04 8 12 16 20 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r )no(sd on-resistance ( ) - 0 2 4 6 8 10 0 8 16 24 32 40 i d = 4 a ) v ( egatlo v ecr u os-ot-etag - q g - t otal gate charge (nc) v sg v ds = 75 v v ds = 25 v v ds = 50 v tran sfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0. 8 1.2 1.6 2 . 0 012345 25 c t c = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) )a( tnerr u c niard -i d c rss 0 440 88 0 1320 1760 2200 02 0 4060 8 0 100 c oss c is s v ds - drain-to-so u rce v oltage ( v ) )fp ( ecnaticapac c - 0.4 0.7 1.0 1.3 1.6 1.9 2 . 2 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v t j - j u nction t emperat u re (c) r )no(sd istances e r- n o - )dezilamro n ( v gs = 4.5 v i d = 4 a www.din-tek.jp dtl 1 9 p 10
4 ty pi cal characteristics 25 c, unless otherwise noted source- drain diode forward voltage threshold voltage 1 10 100 25 c t j = 150 c v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s -i s 1.2 1.5 0.0 0.3 0.6 0.9 - 0.4 - 0.2 0.0 0.2 0.4 0.6 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - t emperat u re (c) v ) h t ( s g ) v ( i d = 5 ma on-resis tance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.0 0.2 0.4 0.6 0. 8 1.0 01 23 4567 8 910 v gs - gate-to-so u rce v oltage ( v ) r )no(sd ( ) ecnatsiser-no ecr u os-ot-niard - 25 c 125 c 0 30 5 0 10 20 r ( w ) e w o p t ime (s) 40 10 1000 1 0.1 0.001 100 0.01 saf e operating area, junction-to-ambient 1 ms 10 ms 100 ms dc 1 s 10 s 100 1 0.01 10 )a ( tnerr u cniard i d - 0.1 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified t a = 25 c single p u lse limited b y r ds(on) * 1 10 100 www.din-tek.jp dtl 1 9 p 10
5 typica l c har acteristics 25 c, unless otherwise noted * t h e power dissipation pd is based on t j(ma x) = 150 c, using ju nction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limi t. current derating* 0 3 6 9 12 15 0 2 55 075100125150 i d )a( tnerr u c niard - t c - case te mperat u re (c) po wer, junction-to-case 0 13 26 39 52 65 0 25 50 75 100 125 150 t c - case te mperat u re (c) r ( w ) e w op power, junc tion-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er www.din-tek.jp dtl 1 9 p 10
6 ty pi cal characteristics 25 c, unless otherwise noted no rmalized t hermal transient impedance, junction-to-ambient nsienta r t fecti v ef e zedi l a m r o n e c n a d e p m i l a m r e h t 10 -2 1 10 1000 10 -1 10 -3 100 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm 10 -4 n o rmalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 1 0.1 0.01 0.2 0.1 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.05 0.02 single p u lse www.din-tek.jp dtl 1 9 p 10
note: dimension l3 is for reference only. l2 b1 b b2 e l3 l1 l d c a1 c1 a e 1
dim min max min max a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 e 6.48 6.73 0.255 0.265 e 2.28 bs c 0.090 bsc l 8.89 9.53 0.350 0.375 l1 1.91 2.28 0.075 0.090 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.045 0.060 ecn: s-03946?rev. e, 09-jul-01 dwg: 5346 www. g d \ v h p l m s package information www.din-tek.jp
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